Localization properties of vibrational modes in $a$-Si3N4
Luigi Giacomazzi

TL;DR
This study uses first-principles calculations to analyze vibrational mode localization in amorphous silicon nitride, revealing how specific modes relate to atomic motions and how localization varies with frequency.
Contribution
It provides a detailed first-principles analysis of vibrational mode localization and atomic motion contributions in amorphous silicon nitride, including the effects of potential N--N bonds.
Findings
Modes above 600 cm$^{-1}$ become more localized and exhibit optic-like behavior.
Infrared peaks at 471 cm$^{-1}$ and 825 cm$^{-1}$ are linked to specific atomic motions.
Localization increases with frequency, especially above 1000 cm$^{-1}$.
Abstract
We present a first-principles investigation of the localization properties of vibrational modes in amorphous silicon nitride (-SiN). Our investigation further confirms that the vibrational modes underlying the peak at 471 cm in the infrared spectrum of silicon nitride mainly consist of nitrogen motion in the direction normal to the plane defined by the three Si nearest neighbors. In-plane stretching of N--Si bonds becomes largely dominant above 700 cm. In particular vibrational modes underlying the infrared peak at 825 cm arise from the N--Si bond stretching motions. If N--N homopolar bonds were present, we show that N--N bond stretching occurs above 1100 cm. Furthermore, we investigate the localization properties of vibrational modes by calculating their inverse participation ratio (IPR) and phase quotient. From this analysis we…
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Taxonomy
TopicsAdvanced ceramic materials synthesis · Acoustic Wave Resonator Technologies · Ferroelectric and Piezoelectric Materials
