Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

TL;DR

This paper reports on the fabrication and analysis of a nonpolar AlN Schottky diode, revealing temperature-dependent inhomogeneity effects on barrier height and diode behavior.

Contribution

It introduces a model for inhomogeneous Schottky barriers in AlN diodes, with explicit physical parameters, advancing understanding of their temperature-dependent characteristics.

Findings

Low ideality factor of 3.3 at room temperature

Effective Schottky barrier height of 1.05 eV at room temperature

Mean Schottky barrier height of 2.105 eV from inhomogeneity analysis

Abstract

An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au-AlN SBD features a low ideality factor n of 3.3 and an effective Schottky barrier height (SBH) of 1.05 eV at room temperature. The ideality factor n decreases and the effective SBH increases at high temperatures. The temperature dependences of n and SBH were explained using an inhomogeneous model. A mean SBH of 2.105 eV was obtained for the Ni-AlN Schottky junction from the inhomogeneity analysis of the current-voltage characteristics. An equation in which the parameters have explicit physical meanings in thermionic emission theory is proposed to describe the current-voltage characteristics of inhomogeneous SBDs.