Electron-hole correlations govern Auger recombination in nanostructures
John P. Philbin, Eran Rabani

TL;DR
This paper introduces a new theoretical method that explicitly includes electron-hole interactions to accurately predict Auger recombination lifetimes in semiconductor nanostructures, addressing previous modeling limitations.
Contribution
The authors develop a novel computational approach that captures electron-hole correlations, enabling accurate lifetime predictions for complex nanostructures like quantum dots and nanorods.
Findings
Electron-hole correlations are essential for correct lifetime scaling.
Neglecting correlations can overestimate lifetimes by 100 times.
The method successfully reproduces known volume scaling laws.
Abstract
The fast nonradiative decay of multiexcitonic states via Auger recombination is a fundamental process affecting a variety of applications based on semiconductor nanostructures. From a theoretical perspective, the description of Auger recombination in confined semiconductor nanostructures is a challenging task due to the large number of valance electrons and exponentially growing number of excited excitonic and biexcitonic states that are coupled by the Coulomb interaction. These challenges have restricted the treatment of Auger recombination to simple, noninteracting electron-hole models. Herein we present a novel approach for calculating Auger recombination lifetimes in confined nanostructures having thousands to tens of thousands of electrons, explicitly including electron-hole interactions. We demonstrate that the inclusion of electron-hole correlations are imperative to capture the…
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