Si-doped Defect in Monolayer Graphene: Magnetic Quantization

TL;DR

This study investigates the magnetic quantization phenomena in Si-doped monolayer graphene with various defect configurations, revealing distinct Landau level types and magneto-optical selection rules influenced by doping and defect structures.

Contribution

It introduces a generalized tight-binding model that accounts for non-uniform bond lengths, site energies, and hopping integrals to analyze magnetic quantization in doped graphene defects.

Findings

Identification of four types of Landau levels with unique properties.

Magneto-optical selection rules depend on sublattice symmetry and defect configuration.

Distinct inter-LL excitation rules related to sublattice equivalence.

Abstract

We explore the rich and unique magnetic quantization of Si-doped graphene defect systems with various concentrations and configurations using the generalized tight-binding model. This model takes into account simultaneously the non-uniform bond lengths, site energies and hopping integrals, and a uniform perpendicular magnetic field (${B_z\hat z}$). The magnetic quantized Landau levels (LLs) are classified into four different kinds based on the probability distributions and oscillation modes. The main characteristics of LLs are clearly reflected in the magneto-optical selection rules which cover the dominating ${\Delta\,n=|n^v-n^c|=0}$, the coexistent ${\Delta\,n=0}$ $\&$ ${\Delta\,n=1}$, and the specific ${\Delta\,n=1}$. These rules for inter-LLs excitations come from the non-equivalence or equivalence of the A$_i$ and B$_i$ sublattices in a supercell.