Stress control of tensile-strained In$_{1-x}$Ga$_{x}$P nanomechanical string resonators

TL;DR

This study explores the mechanical properties of tensile-stressed In$_{1-x}$Ga$_{x}$P nanostring resonators, revealing orientation-dependent stress and potential for tuning high-Q nanomechanical systems.

Contribution

It demonstrates the orientation-dependent stress in In$_{1-x}$Ga$_{x}$P nanostrings and shows how to fine-tune tensile stress for improved nanomechanical device performance.

Findings

Maximum stress of 650 MPa observed

Stress varies up to 50% with orientation

Potential for tuning high-Q nanomechanical systems

Abstract

We investigate the mechanical properties of freely suspended nanostrings fabricated from tensile-stressed, crystalline In$_{1-x}$Ga$_{x}$P. The intrinsic strain is a consequence of the epitaxial growth given by the lattice mismatch between the thin film and the substrate which is confirmed by x-ray diffraction measurements. The flexural eigenfrequencies of the nanomechanical string resonators reveal an orientation dependent stress with a maximum value of 650 MPa. The angular dependence is explained by a combination of anisotropic Young's modulus and a change of elastic properties caused by defects. As a function of the crystal orientation a stress variation of up to 50 % is observed. This enables fine tuning of the tensile stress for any given Ga content $x$, which implies interesting prospects for the study of high Q nanomechanical systems.