Anomalous Characteristics of the Generation - Recombination Noise in Quasi-One-Dimensional Van der Waals Nanoribbons

TL;DR

This study investigates low-frequency electronic noise in ZrTe3 nanoribbons, revealing how generation-recombination noise characteristics depend on temperature and electric field, with implications for nanoscale electronic applications.

Contribution

It uncovers the electric field sensitivity of G-R noise corner frequency and highlights defect-related activation energy as key factors in quasi-1D van der Waals nanoribbons.

Findings

G-R noise exhibits Lorentzian peaks sensitive to bias voltage.

Activation energy relates to defect capture cross-section, not energy level.

Electric field influences the corner frequency of noise peaks.

Abstract

We describe the low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional ZrTe3 van der Waals nanoribbons, which have recently attracted attention owing to their extraordinary high current carrying capacity. Whereas the low-frequency noise spectral density reveals 1/f behavior near room temperature, it is dominated by the Lorentzian bulges of the generation - recombination noise at low temperatures (f is the frequency). Unexpectedly, the corner frequency of the observed Lorentzian peaks shows strong sensitivity to the applied source - drain bias. This dependence on electric field can be explained by the Frenkel-Poole effect in the scenario where the voltage drop happens predominantly on the defects, which block the quasi-1D conduction channels. We also have found that the activation energy of the characteristic frequencies of the G-R noise in quasi-1D ZrTe3 is defined primarily by the temperature dependence of the capture cross-section of the defects rather than by their energy position. These results are important for the application of quasi-1D van der Waals materials in ultimately downscaled electronics.