Spin Dressed Relaxation and Frequency Shifts from Field Imperfections
C.M. Swank, E.K. Webb, X. Liu, B.W. Filippone

TL;DR
This paper investigates how field imperfections affect spin dressing techniques used to enhance frequency shift sensitivity, using new theoretical models and simulations to optimize parameters for stable operation.
Contribution
It introduces a quasi-quantum model incorporating field gradients and compares it with Monte Carlo simulations to optimize critical dressing parameters.
Findings
Analytical predictions match simulation results.
Optimized parameters for stable critical dressing are identified.
Field imperfections significantly impact relaxation and frequency shifts.
Abstract
Critical dressing, the simultaneous dressing of two spin species to the same effective Larmor frequency, is a technique that can, in principle, improve the sensitivity to small frequency shifts. The benefits of spin dressing and thus critical dressing are achieved at the expense of generating a large (relative to the holding field ,) homogeneous oscillating field. Due to inevitable imperfections of the fields generated, the benefits of spin dressing may be lost from the additional relaxation and noise generated by the dressing field imperfections. In this analysis the subject of relaxation and frequency shifts are approached with simulations and theory. Analytical predictions are made from a new quasi-quantum model that includes gradients in the holding field and dressing field where is oscillating at frequency…
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Mechanical and Optical Resonators · Quantum and electron transport phenomena
