Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime
S.V. Gudina, Yu.G. Arapov, V.N. Neverov, A.P. Savelyev, S.M., Podgonykh, N.G. Shelushinina, M.V.Yakunin

TL;DR
This study investigates how electron-electron interactions affect the conductivity of InGaAs quantum wells in the ballistic regime, showing good agreement between experimental data and theoretical predictions across a wide temperature range.
Contribution
First experimental comparison of quantum conductivity corrections in InGaAs quantum wells with interaction theory in the ballistic regime.
Findings
Good agreement between theory and experiment from 10 K to 60 K.
Quantum conductivity corrections are significant in the ballistic regime.
Temperature-dependent behavior matches theoretical predictions.
Abstract
We report an experimental study of quantum conductivity corrections for two-dimensional electron gas in a GaAs/InGaAs/GaAs single and double quantum wells in a wide temperature range (1.8-100) K. We perform a comparison of our experimental data for the longitudinal conductivity at zero magnetic field to the theory of interaction-induced corrections to th transport coefficients. In the temperature range from 10 K up to (45-60) K, wich covers the ballistic interaction regimes for our samples, a rather good agreement between the theory and our experimental results has been found.
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