Magnetoresistance from Fermi Surface Topology
Sheng Nan Zhang, Quan Sheng Wu, Yi Liu, Oleg V. Yazyev

TL;DR
This paper combines first-principles Fermi surface calculations with Boltzmann transport theory to explain large, non-saturating magnetoresistance in various materials, linking it to Fermi surface topology and charge-carrier dynamics.
Contribution
It introduces a comprehensive approach to understanding magnetoresistance through Fermi surface topology, applied to multiple materials including topological semimetals.
Findings
Excellent agreement with experimental magnetoresistance data
Identified Fermi surface features responsible for anisotropic magnetoresistance
Clarified the role of topological phases in large magnetoresistance
Abstract
Extremely large non-saturating magnetoresistance has recently been reported for a large number of both topologically trivial and non-trivial materials. Different mechanisms have been proposed to explain the observed magnetotransport properties, yet without arriving to definitive conclusions or portraying a global picture. In this work, we investigate the transverse magnetoresistance of materials by combining the Fermi surfaces calculated from first principles with the Boltzmann transport theory approach relying on the semiclassical model and the relaxation time approximation. We first consider a series of simple model Fermi surfaces to provide a didactic introduction into the charge-carrier compensation and open-orbit mechanisms leading to non-saturating magnetoresistance. We then address in detail magnetotransport in three representative materials: (i) copper, a prototypical nearly…
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