Simultaneous Switching of Multiple GaN Transistors in a High-Speed Switch

TL;DR

This paper introduces a microwave photonics-based method to simultaneously switch multiple GaN transistors in a high-speed, high-voltage switch, achieving precise synchronization and fast pulse generation for accelerator applications.

Contribution

It presents a novel technique for driving multiple series-connected GaN transistors using microwave photonics, enabling high-voltage, high-speed switching with precise synchronization.

Findings

Achieved 600 V arbitrary pulse generation with 2 ns rise/fall time.

Demonstrated synchronization of four GaN transistors in series.

Flexible pulse width adjustment from 4 ns to DC.

Abstract

A broadband travelling wave kicker operating with 80 MHz repetition rates is required for the new PIP-II accelerator at Fermilab. We present a technique to drive simultaneously four series-connected enhancement mode GaN-on-silicon power transistors by means of microwave photonics techniques. These four transistors are arranged into a high voltage and high repetition rate switch. Using multiple transistors in series is required to share switching losses. Using a photonic signal distribution system is required to achieve precise synchronization between transistors. We demonstrate 600 V arbitrary pulse generation into a 200 Ohm load with 2 ns rise/fall time. The arbitrary pulse widths can be adjusted from 4 ns to essentially DC.