Suppression of Dielectronic Recombination Due to Finite Density Effects II: Analytical Refinement and Application to Density-dependent Ionization Balances and AGN Broad-line Emission
D. Nikoli\'c, T. W. Gorczyca, K. T. Korista, M. Chatzikos, G. J., Ferland, F. Guzm\'an, P. A. M. van Hoof, R. J. R. Williams, N. R. Badnell

TL;DR
This paper refines the analytical modeling of dielectronic recombination suppression at intermediate densities, improving plasma ionization balance calculations and AGN emission predictions.
Contribution
It introduces improved suppression factors for dielectronic recombination applicable at intermediate densities, with technical enhancements over previous models.
Findings
Refined suppression factors improve ionization balance modeling.
Inclusion of secondary autoionization affects recombination rates.
Application to AGN broad-line emission spectra shows notable differences.
Abstract
We present improved fits to our treatment of suppression of dielectronic recombination at intermediate densities. At low densities, most recombined excited states eventually decay to the ground state, and therefore the total dielectronic recombination rate to all levels is preserved. At intermediate densities, on the other hand, collisions can lead to ionization of higher-lying excited states, thereby suppressing the dielectronic recombination rate. The improved suppression factors presented here, although highly approximate, allow summed recombination rate coefficients to be used to intermediate densities. There have been several technical improvements to our previously presented fits. For H- through B-like ions the activation log densities have been adjusted to better reproduce existing data. For B-, C-, Al-, and Si-like ions secondary autoionization is now included. The treatment of…
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