Charge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum Confinement

TL;DR

This paper extends the charge-based model for ultrathin junctionless double-gate FETs by incorporating quantum confinement effects, improving accuracy across all operational regimes.

Contribution

It introduces a generalized analytical model including quantum electron density with a first-order correction, aligning well with numerical simulations.

Findings

Model accurately predicts charge distribution and current in all operation regions.

Inclusion of quantum effects improves model precision for ultrathin devices.

Analytical results match TCAD simulations across various regimes.

Abstract

This paper presents a generalization of the charge-based model for ultrathin junctionless double-gate (JLDG) field-effect transistors (FETs) by including quantum electron density. The analytical derivation relies on a first-order correction to the infinite quantum well. When restricting the analysis to the first and second quantized states, the free carrier charge distribution and the current in an ultrathin body JLDG FETs are in agreement with numerical TCAD simulations in all the regions of operation, i.e., from deep depletion to accumulation and from linear to saturation.