Quantum Interference Control of Carriers and Currents in Zincblende Semiconductors based on Nonlinear Absorption Processes

TL;DR

This paper investigates how quantum interference in nonlinear optical absorption processes can control carrier distributions and currents in zincblende semiconductors like AlGaAs, with theoretical predictions based on incident light properties.

Contribution

It provides a theoretical analysis of quantum interference effects in 2- and 3-photon absorption, revealing control mechanisms for carrier and current injection in semiconductors.

Findings

Carrier distributions can be polarized and controlled by optical phase and polarization.

Nonlinear absorption processes lead to sharper carrier distributions in the Brillouin zone.

Theoretical predictions show how to manipulate currents via optical field properties.

Abstract

Quantum interference between optical absorption processes can excite carriers with a polarized distribution in the Brillouin zone depending on properties of the incident optical fields. The polarized distribution of carriers introduces a current that can be controlled by the phases and polarizations of the incident optical fields. Here we study the quantum interference of 2- and 3-photon absorption processes in AlGaAs. We present theoretical predictions for carrier and current injection rates considering different frequencies, phases, and polarizations of the incident fields. We also discuss the important features that result from only nonlinear optical processes being involved, which leads for instance to a sharper distribution of carriers in the Brillouin zone.