Stacking-Dependent Magnetism in Bilayer CrI$_3$

TL;DR

This study demonstrates how the stacking order in bilayer CrI$_3$ influences its magnetic ground state, enabling control over magnetic interactions and suggesting experimental measurement via the linear magnetoelectric effect.

Contribution

The paper reveals the direct link between stacking order and magnetic properties in bilayer CrI$_3$, providing a theoretical basis for tuning magnetism in 2D heterostructures.

Findings

Stacking order determines magnetic ground state.

Interlayer exchange interaction can be tuned from antiferromagnetic to ferromagnetic.

Linear magnetoelectric effect can be used to measure stacking-dependent magnetism.

Abstract

We report the connection between the stacking order and magnetic properties of bilayer CrI$_3$ using first-principles calculations. We show that the stacking order defines the magnetic ground state. By changing the interlayer stacking order one can tune the interlayer exchange interaction between antiferromagnetic and ferromagnetic. To measure the predicted stacking-dependent magnetism, we propose using linear magnetoelectric effect. Our results not only gives a possible explanation for the observed antiferromagnetism in bilayer CrI$_3$ but also have direct implications in heterostructures made of two-dimensional magnets.