Gate-Controlled Magnetoresistance of a Paramagnetic Insulator|Platinum Interface

TL;DR

This study demonstrates electric field control of magnetoresistance at a paramagnetic insulator|platinum interface using ionic liquid gating, revealing potential for spintronic device applications without ferromagnets.

Contribution

It introduces ionic gating as a novel method to modulate magnetoresistance in paramagnetic insulator|metal interfaces at low temperatures.

Findings

Magnetoresistance obeys spin Hall magnetoresistance phenomenology.

Electric field via ionic gating influences in-plane magnetoresistance.

Perpendicular magnetic anisotropy observed at the interface.

Abstract

We report an electric field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic gating as an alternative method to control spintronic devices without using ferromagnets.