Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism

TL;DR

This study explores how Ni doping in Co/Cu multilayers affects atomic magnetism and spin transport, revealing a magnetic-to-diamagnetic transition and the influence of magnetic proximity effects on GMR behavior.

Contribution

It provides experimental and theoretical evidence of a magnetic phase transition in Ni-doped Cu spacers and highlights the role of magnetic proximity effects in spin transport properties.

Findings

Ni exhibits a magnetic-to-diamagnetic transition below 15 at.% Ni.

GMR behavior changes step-wise with Ni concentration in gradient-doped spacers.

Uniform spacers show monotonous GMR decrease, indicating magnetic Ni acting as spin scatterers.

Abstract

We investigate the spin transport and ferromagnetic resonance properties of giant magnetoresistive (GMR) Co/Cu-Ni multilayers with variable levels of Ni doping in the Cu spacer. We present an experimental evidence for a magnetic-to-diamagnetic transition in the atomic magnetic moment of Ni in the Cu matrix for concentrations below 15 at. % Ni. As its concentration is increased, Ni atoms turn into spin scattering centers, which is manifested experimentally as a step-like change in the GMR of the multilayers. This behavior is observed in multilayers with gradient-doped Cu spacers, where only the inner region was doped with Ni. In the uniformly doped spacers the GMR decreases monotonously with increasing Ni content, indicating that Ni atoms are magnetic and act as spin relaxation centers in the entire dopant-concentration range studied. We explain the difference in the observed GMR behavior as due to a strong magnetic proximity effect in the uniform spacers, which is efficiently suppressed in the gradient spacers. The observed magnetic phase transition is fully supported by our detailed ab-initio calculations, taking into consideration structural relaxation in the system as well as potential Ni clustering. Controlling the loss or gain of the atomic magnetism for a specific dopant can be a tool in probing and controlling spin relaxation in materials and devices for spin-valve and spin-torque based applications.