Computational identification of Ga-vacancy related electron paramagnetic resonance centers in $\beta$-Ga$_2$O$_3$
Dmitry Skachkov, Walter R.L. Lambrecht, Hans J\"urgen von Bardeleben,, Uwe Gerstmann, Quoc Duy Ho, Peter De\'ak

TL;DR
This study combines experimental EPR measurements and DFT calculations to identify specific gallium vacancy-related defect centers in irradiated $eta$-Ga$_2$O$_3$, revealing their electronic structure and configurations.
Contribution
It provides the first detailed correlation between EPR spectra and specific Ga vacancy defect models in $eta$-Ga$_2$O$_3$ using combined experimental and theoretical approaches.
Findings
Identification of EPR1 as a complex of two tetrahedral Ga vacancies with an interstitial Ga.
EPR2 attributed to octahedral Ga vacancy ($V_{Ga2}$).
Validation of defect models through DFT calculations matching experimental hyperfine interactions.
Abstract
A combined experimental/theoretical study of the EPR in irradiated -GaO is presented. Four EPR spectra, two and two , are observed after high-energy proton or electron irradiation. One of the S=1/2 spectra (EPR1) can be observed at room temperature and below and is characterized by the spin Hamiltonian parameters , , and a quasi isotropic hyperfine interaction with two equivalent Ga neighbors of 14 G on Ga. The second (EPR2) is observed after photoexcitation (with threshold 2.8 eV) at low temperature and is characterized by , , and a quasi isotropic hyperfine interaction with two equivalent Ga neighbors of 10 G. A spin spectrum with a similar g-tensor and a 50\% reduced hyperfine splitting accompanies each of these, which is indicative of a defect of two weakly…
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