Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(110) surfaces

TL;DR

This paper demonstrates a scalable method for growing in-plane InAs one-dimensional channels on various InP surfaces using selective-area chemical beam epitaxy, enabling advanced quantum transport studies.

Contribution

It introduces a novel selective-area chemical beam epitaxy technique for InAs 1-D channels on multiple InP surfaces, suitable for quantum device applications.

Findings

High surface selectivity achieved in InAs nanowire growth

Structural analysis reveals controlled facet formation and defect characteristics

Electrical measurements show strong spin-orbit interaction and phase coherence

Abstract

We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO$_{2}$-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1-D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.