Electrical and optical properties of MoS$_{2}$,MoO$_{x=2,3}$(MoSO)/RGO heterostructure

TL;DR

This study investigates the electrical and optical properties of MoS₂/MoOₓ (MoSO)/reduced graphene oxide heterostructures, combining experimental transport measurements with theoretical calculations to understand their electronic behavior for potential device applications.

Contribution

The paper provides a combined experimental and theoretical analysis of MoSO/RGO heterostructures, revealing size and layer number effects on electronic properties and Schottky behavior.

Findings

Schottky behavior observed at heterostructure interfaces.

Lateral size increase leads to gap disappearance and Fermi level shift.

Experimental results align qualitatively with theoretical predictions.

Abstract

We report on transport properties of the controllable large area MoSO/Reduced graphene oxide(RGO) heterostructures electrodeposited on FTO substrates and its comparision with theoretical calculations on MoSo/Gr. I-V characteristics of the heterostructure made by P or n-type MoSO, exhibit Schottkey behavior in the interface similar to the MoS$_{2}$/Gr ones. Theoretical calculations show significant effects of lateral layer size as well as layer number in the electronic properties. In monolayer MoS$_{2}$/Gr by increasing the lateral size the energy gap disappears and the Fermi level shifts towards valence band. In the case of bilayer MoS$_{2}$ on bilayer Gr structure, the Fermi level shift is again towards valence band but, the gap is slightly higher than the monolayer structure. We found that the experimentally obtained results for n-type MoSO/RGO results are qualitatively in agreement with theoretical calculations of the MoS$_{2}$/Gr heterostructure. These results are beneficial to understand and design the high quality and low cost MoSO/RGO based electronic, optoelectronic and energy storage devices or cocatalysts.