Improved thermal stability in doped MnN/CoFe exchange bias systems

TL;DR

This study enhances the thermal stability of MnN/CoFe exchange bias systems by doping with elements that strengthen nitrogen binding, resulting in higher exchange bias fields at elevated temperatures.

Contribution

It introduces a method of improving thermal stability through doping with elements selected based on defect energy calculations from density functional theory.

Findings

Doping with elements having negative defect energies enhances thermal stability.

Y-doped MnN layers maintain high exchange bias fields up to 485°C.

Doping concentrations below 2% are effective in stabilizing the system.

Abstract

We investigated the influence of doping antiferromagnetic MnN in polycrystalline MnN/CoFe exchange bias systems, showing high exchange bias of up to 1800 Oe at room temperature. The thermal stability of those systems is limited by nitrogen diffusion that occurs during annealing processes. In order to improve the thermal stability, defect energies of elements throughout the periodic table substituting Mn were calculated via density functional theory. Elements calculated to have negative defect energies bind nitrogen stronger to the lattice and could be able to prevent diffusion. We prepared exchange bias stacks with doping concentrations of a few percent by (reactive) co-sputtering, testing doping elements with defect energies ranging from highly negative to slightly positive. We show that doping with elements calculated to have negative defect energies indeed improves the thermal stability. Y doped MnN layers with doping concentrations below 2% result in systems that show exchange bias fields higher than 1000 Oe for annealing temperatures up to 485{\deg} C.