Effect of N interstitial complexes on the electronic properties of GaAs$_{1-x}$N$_{x}$ alloys from first principles

TL;DR

This study uses first-principles calculations to analyze how five different nitrogen-related defects affect the electronic properties of GaAsN alloys, clarifying defect roles and their impact on electronic states.

Contribution

It provides a detailed first-principles analysis of five N defect types in GaAsN alloys, identifying their formation energies and electronic levels, and clarifying their influence on the material's electronic structure.

Findings

(N-As)$_{As}$ is the lowest energy interstitial defect.

Isolated N causes strong hybridization with conduction band.

Deep levels are associated with (N-N)$_{As}$ split-interstitials.

Abstract

Several approaches have been used to investigate the impact of Nitrogen (N) on the electronic structure of GaAs$_{1-x}$N$_{x}$ alloys, however, there is no agreement between theory and experiments about the importance of the different N interstitial defects in these alloys, and their nature is still unknown. Here we analyze the impact of five different N defects on the electronic structure of GaAs$_{1-x}$N$_{x}$ alloys, using density-functional methods: we calculate electronic states, formation energies and charge transition levels. The studied defects include N$_{As}$, As$_{Ga}$, As$_{Ga}$-N$_{As}$ substitutional defects, and (N-N)$_{As}$, (N-As)$_{As}$ split-interstitial complex defects. Our calculated defect formation energies agree with those reported by S.B. Zhang et al. [Phys. Rev. Lett. 86, 1789 (2001)], who predicted these defects. Among the interstitial defects, we found that (N-As)$_{As}$ emerges as the lowest energy configuration in comparison with (N-N)$_{As}$, agreeing with recent experiments [T. Jen, et al., Appl. Phys. Lett. 107, 221904 (2015)]. We also calculated the levels induced in the electronic structure due to each of these defects: defect states may occur as deep levels in the gap, shallow levels close to the band edges, and as levels between bulk states. We find that the largest changes in the band structure are produced by an isolated N atom in GaAs, which is resonant with the conduction band, exhibiting a strong hybridization between N and GaAs states. Deeper levels in the bandgap are obtained with (N-N)$_{As}$ split-interstitial defects. Our results confirm the formation of highly localized states around the N sites, which is convenient for photovoltaics and photoluminescence applications.