Effect of Randomly Distributed Asymmetric Stone-Wales Defect on Electronic and Transport Properties of Armchair Graphene Nanoribbon

TL;DR

This study uses a tight binding model to analyze how randomly distributed asymmetric Stone-Wales defects affect the electronic and transport properties of armchair graphene nanoribbons, revealing defect density's major impact and potential for property engineering.

Contribution

It introduces a detailed analysis of defect distribution effects on AGNR electronic properties, highlighting defect density as a key factor and identifying special geometries with unique properties.

Findings

Defect density significantly influences conductance.

Certain defect geometries exhibit unique electronic behaviors.

Defect orientation has a lesser effect than density.

Abstract

By applying tight binding model, we investigate the electronic and transport properties of randomly distributed Stone-Wales (SW) defects on an armchair graphene nanoribbon (AGNR). We use four different functions, as distribution functions, to generate our SW defected nanoribbons. It is found that defect density can have a major effect on the conductance of our defected system, whilst other configurations such as defect orientation will contribute less. In our investigations. some special geometries are found, which shows interesting electronic and transport properties. These special cases along the other data provided can be used to engineer band gap, electronic properties and transport properties of graphene nanoribbons to meet the desired purpose.