Cavity-assisted atomic Raman memories beyond the bad cavity limit: effect of four-wave mixing
N. G. Veselkova, N. I. Masalaeva, I. V. Sokolov (St. Petersburg State, University, Russia)

TL;DR
This paper investigates four-wave mixing noise in cavity-assisted atomic Raman memories for short signals, proposing a spectral filtering approach to account for side-band noise sources and improve memory quality.
Contribution
It introduces a unified theoretical framework for modeling side-band quantum noise sources in atomic memories, extending analysis beyond the bad cavity limit.
Findings
Four-wave mixing noise significantly affects memory retrieval quality.
Spectral filtering can mitigate side-band noise contributions.
Side-band atomic and field noise sources are comparably influential.
Abstract
Quantum memories can be used not only for the storage of quantum information, but also for substantial manipulation of ensembles of quantum states. Therefore, the speed of such manipulation and the ability to write and retrieve the signals of relatively short duration becomes important. Previously there have been considered the limits on efficiency of the cavity-enhanced atomic Raman memories for the signals whose duration is not much larger than the cavity field lifetime, that is, beyond the bad cavity limit. We investigate in this work the four-wave mixing noise that arises by the retrieval of the relatively short signals from the cavity-assisted memories, thus complementing recent considerations by other authors, who mainly concentrated on the limit of large cavity decay rate. The four-wave mixing noise is commonly recognized as an important factor, able to prevent achieving a high…
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