An Ab Initio Investigation on the Electronic Structure, Defect Energetics, and Magnesium Kinetics in Mg$_3$Bi$_2$
Jeongjae Lee, Bartomeu Monserrat, Ieuan Seymour, Zigeng Liu, Sian, Dutton, Clare Grey

TL;DR
This study uses advanced ab initio methods to analyze Mg$_3$Bi$_2$, revealing how defect formation and spin-orbit coupling influence its electronic properties and magnesium diffusion, which are crucial for battery performance.
Contribution
It introduces a combined DFT and $G_0W_0$ approach with a hybrid eigenvector-following method to accurately evaluate defect energetics and Mg migration barriers considering relativistic effects.
Findings
Mg$_3$Bi$_2$ is a small band gap semiconductor.
Spin-orbit coupling significantly lowers defect formation energies.
Spin-orbit coupling reduces Mg migration barrier to 0.34 eV.
Abstract
We present a comprehensive ab initio investigation on MgBi, a promising Mg-ion battery anode material with high rate capacity. Through combined DFT (PBE, HSE06) and electronic structure calculations, we find that MgBi is likely to be a small band gap semiconductor. DFT-based defect formation energies indicate that Mg vacancies are likely to form in this material, with relativistic spin-orbit coupling significantly lowering the defect formation energies. We show that a transition state searching methodology based on the hybrid eigenvector-following approach can be used effectively to search for the transition states in cases where full spin-orbit coupling is included. Mg migration barriers found through this hybrid eigenvector-following approach indicate that spin-orbit coupling also lowers the migration barrier, decreasing it to a value of 0.34 eV with…
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