Quantized Single-Ion-Channel Hodgkin-Huxley Model for Quantum Neurons
Tasio Gonzalez-Raya, Xiao-Hang Cheng, I\~nigo L. Egusquiza, Xi Chen,, Mikel Sanz, Enrique Solano

TL;DR
This paper introduces a quantum version of the Hodgkin-Huxley neuron model using a quantum memristor, demonstrating quantum effects in neuron-like circuits and exploring potential for quantum neural networks and neuromorphic quantum computing.
Contribution
It presents a quantized Hodgkin-Huxley model with a quantum memristor, analyzing its behavior and potential implementation in superconducting circuits for quantum neural networks.
Findings
Quantum features in voltage moments related to zero-point energy
Memristor conductance adapts to signal history in quantum regime
Potential implementation as superconducting quantum circuits
Abstract
The Hodgkin-Huxley model describes the behavior of the cell membrane in neurons, treating each part of it as an electric circuit element, namely capacitors, memristors, and voltage sources. We focus on the activation channel of potassium ions, due to its simplicity, while keeping most of the features displayed by the original model. This reduced version is essentially a classical memristor, a resistor whose resistance depends on the history of electric signals that have crossed it, coupled to a voltage source and a capacitor. Here, we will consider a quantized Hodgkin-Huxley model based on a quantum memristor formalism. We compare the behavior of the membrane voltage and the potassium channel conductance, when the circuit is subjected to AC sources, in both classical and quantum realms. Numerical simulations show an expected adaptation of the considered channel conductance depending on…
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