Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction
Tuomo Tanttu, Bas Hensen, Kok Wai Chan, Henry Yang, Wister Huang,, Michael Fogarty, Fay Hudson, Kohei Itoh, Dimitrie Culcer, Arne Laucht, Andrea, Morello, Andrew Dzurak

TL;DR
This paper investigates how the spin-orbit interaction in silicon quantum dots can be controlled via magnetic field orientation, revealing its impact on qubit coherence and providing pathways for scalable silicon quantum computing.
Contribution
It provides a detailed experimental profile of spin-orbit interactions in silicon quantum dots and demonstrates how magnetic field direction can tune these interactions to improve qubit performance.
Findings
Spin-orbit interactions are dominated by vector potential effects.
Momentum-term spin-orbit interactions vary from 1.85 MHz to 27.5 MHz.
Tuning spin-orbit interaction increases qubit coherence time by 80%.
Abstract
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which degrade the performance of the qubits or, when understood and controlled, could be used as a powerful resource. To understand how to control this interaction we build a detailed profile of the spin-orbit interaction of a silicon metal-oxide-semiconductor double quantum dot system. We probe the derivative of the Stark shift, -factor and -factor difference for two single-electron quantum dot qubits as a function of external magnetic field and find that they are dominated by spin-orbit interactions originating from the vector potential, consistent with recent theoretical predictions. Conversely, by populating the double dot with two electrons we…
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