Bound electron pair in a MOS-structure

TL;DR

This paper numerically investigates how spin-orbit interaction, image charge forces, and gate voltage influence the formation and stability of bound electron pairs in a MOS-structure, suggesting potential for room-temperature stability.

Contribution

It introduces a numerical analysis of bound electron pairs in a MOS-structure considering SOI, image forces, and gate voltage effects, highlighting conditions for room-temperature stability.

Findings

Bound state energy and wave function of electron pairs were calculated.

Gate voltage can significantly increase the bound energy, enhancing stability.

Electron pairs can remain stable at room temperature under certain conditions.

Abstract

In developing our previous contribution (arXiv:1804.00889) we have numerically found the bound state energy and correspondent wave function of the two electrons confined to move in a quantum well placed close to the gate electrode. Spin-orbit interaction (SOI) and image charge forces result in effective attraction between electrons. We considered also the effect of gate voltage applied to the structure and discovered that this can essentially increase the bound energy of the pair so that it remains stable even at room temperature.