High Fidelity Single-Shot Singlet-Triplet Readout of Precision Placed Donors in Silicon

TL;DR

This paper demonstrates high-fidelity single-shot readout of singlet-triplet states in silicon donor electrons, achieving 98.4% fidelity and measuring relaxation times up to 3 seconds, advancing quantum information processing capabilities.

Contribution

The work introduces a direct single-shot readout technique for singlet-triplet states in silicon donors with high fidelity, utilizing large energy splitting from Pauli-spin blockade.

Findings

Achieved 98.4% single-shot readout fidelity.

Measured triplet-minus relaxation time of about 3 seconds at 2.5T.

Observed relaxation time decrease with magnetic field, reaching 0.5s at 1T.

Abstract

In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision placed donor atoms in silicon. Our method takes advantage of the large energy splitting given by the Pauli-spin blockaded (2,0) triplet states, from which we can achieve a single-shot readout fidelity of 98.4$\pm$0.2%. We measure the triplet-minus relaxation time to be of the order 3s at 2.5T and observe its predicted decrease as a function of magnetic field, reaching 0.5s at 1T.