Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation
John Anders, Mathieu Benoit, Saverio Braccini, Raimon Casanova,, Hucheng Chen, Kai Chen, Francesco Armando di Bello, Armin Fehr, Didier, Ferrere, Dean Forshaw, Tobias Golling, Sergio Gonzalez-Sevilla, Giuseppe, Iacobucci, Moritz Kiehn, Francesco Lanni, Hongbin Liu, Lingxin Meng
TL;DR
This study uses the Transient Current Technique to analyze charge collection and depletion depth in ams H35DEMO CMOS sensors, examining effects of proton irradiation across various resistivities and irradiation sources.
Contribution
It provides new insights into the radiation hardness and charge collection efficiency of high-voltage CMOS sensors post-irradiation.
Findings
Charge collection efficiency varies with substrate resistivity.
Depletion depth decreases after proton irradiation.
Sensor performance remains robust under certain irradiation conditions.
Abstract
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.
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