Pressure-induced Superconductivity in Sulfur-doped SnSe Single Crystal Using Boron-doped Diamond Electrode-prefabricated Diamond Anvil Cell

TL;DR

This study demonstrates that sulfur-doped SnSe single crystals exhibit pressure-induced superconductivity, with electrical resistivity measurements revealing an insulator-metal-superconductor transition under high pressure up to 75.9 GPa.

Contribution

The paper introduces a novel high-pressure experimental setup using boron-doped diamond electrodes and nano-polycrystalline diamond anvils to investigate superconductivity in sulfur-doped SnSe.

Findings

Superconductivity observed at high pressure in sulfur-doped SnSe.

Pressure induces insulator-metal-superconductor transition.

Enhanced pressure range up to 75.9 GPa achieved with advanced diamond anvils.

Abstract

Sulfur-doped SnSe single crystal was successfully synthesized using a melt and slow-cooling method. The chemical composition and valence state of the obtained sample were analyzed by X-ray photoelectron spectroscopy. The pressure range of a diamond anvil cell with boron-doped diamond electrodes was upgraded to 104 GPa using nano-polycrystalline diamond anvil to investigate a pressure effect for the sample. Electrical resistivity measurements of sulfur-doped SnSe single crystal showed the insulator-metal-superconductor transition by applying high pressure up to 75.9 GPa.