NMR study of optically hyperpolarized phosphorus donor nuclei in silicon
P. Gumann, H. Haas, S. Sheldon, L. Zhu, M.L.W. Thewalt, D.G. Cory, and, C. Ramanathan

TL;DR
This study demonstrates optical hyperpolarization of phosphorus donor nuclei in natural silicon at low temperature and high magnetic field, revealing broad spectral linewidths and shorter nuclear spin relaxation times compared to enriched silicon, with implications for quantum information.
Contribution
It provides the first detailed NMR analysis of optically hyperpolarized phosphorus in natural silicon, highlighting isotope and strain effects on linewidth and relaxation times.
Findings
Spectral linewidth of 30 kHz due to isotope effects and strain variations.
Shorter nuclear spin T1 and build-up times in natural silicon compared to enriched samples.
Laser irradiation further shortens the phosphorus nuclear spin coherence time.
Abstract
We use above-bandgap optical excitation, via a 1047 nm laser, to hyperpolarize the P spins in low-doped (N cm) natural abundance silicon at 4.2 K and 6.7 T, and inductively detect the resulting NMR signal. The kHz spectral linewidth observed is dramatically larger than the 600 Hz linewidth observed from a Si-enriched silicon crystal. We show that the observed broadening is consistent with previous ENDOR results showing discrete isotope mass effect contributions to the donor hyperfine coupling. A secondary source of broadening is likely due to variations in the local strain, induced by the random distribution of different isotopes in natural silicon. The nuclear spin T and the build-up time for the optically-induced P hyperpolarization in the natural abundance silicon sample were observed to be s and s…
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