Atmosphere Pressure Chemical Vapor Deposition of Graphene

TL;DR

This paper reviews recent advances in atmosphere pressure chemical vapor deposition (APCVD) for graphene synthesis, highlighting its advantages, process details, and potential applications in electronics, optoelectronics, and energy harvesting.

Contribution

It provides a comprehensive overview of APCVD techniques for graphene production and discusses their recent developments and applications.

Findings

APCVD enables high-quality graphene synthesis at atmospheric pressure.

Graphene produced by APCVD shows promise for flexible and energy devices.

Recent advances improve process efficiency and material quality.

Abstract

Recently, graphene is of highly interest owing to its outstanding conductivity, mechanical strength, thermal stability, etc. Among various graphene synthesis methods, atmosphere pressure chemical vapor deposition (APCVD) is one of the best synthesis one due to very low diffusitivity coefficient and a critical step for graphene-based device fabrication. High-temperature APCVD processes for thin film productions are being recognized in many diversity technologies such as solid-state electronic devices, in particular, high quality epitaxial semiconductor films for silicon bipolar and metal oxide semiconductor (MOS) transistors. Graphene-based devices exhibit high potential for applications in flexible electronics, optoelectronics, and energy harvesting. In this chapter, recent advances of APCVD-based graphene synthesis and their related applications will be addressed.