Influence of the Hole Transporting Layer on the Thermal Stability of Inverted Organic Photovoltaics Using Accelerated Heat Lifetime Protocols

TL;DR

This study investigates how the choice of hole transporting layer affects the thermal stability of inverted organic photovoltaics, revealing that the MoO3 layer at the interface is a key failure point under heat stress.

Contribution

It provides a systematic analysis of the thermal degradation mechanisms in inverted OPVs with MoO3 HTL, highlighting the interface as a critical factor for stability.

Findings

MoO3 interface is the main failure origin under heat stress

Degradation primarily occurs at the P3HT:PC70BM/MoO3 interface

Thermal stability can be improved by modifying the interface

Abstract

High power conversion efficiency (PCE) inverted organic photovoltaics (OPVs) usually use thermally evaporated MoO3 as a hole transporting layer (HTL). Despite the high PCE values reported, stability investigations are still limited and the exact degradation mechanisms of inverted OPVs using thermally evaporated MoO3 HTL remain unclear under different environmental stress factors. In this study, we monitor the accelerated lifetime performance of non-encapsulated inverted OPVs using thiophene-based active layer materials and evaporated MoO3 under the ISOS D-2 protocol (heat conditions 65 {\deg}C). The investigation of degradation mechanisms presented focus on optimized P3HT:PC[70]BM-based inverted OPVs. Specifically, we present a systematic study on the thermal stability of inverted P3HT:PC[70]BM OPVs using solution processed PEDOT:PSS and evaporated MoO3 HTL. Using a series of measurements and reverse engineering methods we report that the P3HT:PC[70]BM/MoO3 interface is the main origin of failure of P3HT:PC[70]BM-based inverted OPVs under intense heat conditions.