The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells

TL;DR

This study compares how different hole transporting layers (HTLs) affect charge accumulation and efficiency in p-i-n perovskite solar cells, revealing that CuO leads to the best performance due to reduced recombination.

Contribution

It provides a comparative analysis of organic and inorganic HTLs in perovskite solar cells, highlighting how material choice influences charge dynamics and device efficiency.

Findings

CuO HTL yields highest efficiency at 15.3%

Charge accumulation decreases with CuO, enhancing recombination resistance

Increased grain size reduces charge recombination across HTLs

Abstract

The charge accumulation properties of p-i-n perovskite solar cells were investigated using three representative organic and inorganic hole transporting layer (HTLs): a) Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS, Al 4083), b) copper-doped nickel oxide (Cu:NiOx) and c) Copper oxide (CuO). Through impedance spectroscopy analysis and modelling it is shown that charge accumulation is decreased in the HTL/Perovskite interface, between PEDOT:PSS to Cu:NiOx and CuO respectively. This was indicative from the decrease in double layer capacitance (Cdl) and interfacial charge accumulation capacitance (Cel), resulting in an increase to recombination resistance (Rrec), thus decreased charge recombination events between the three HTLs. Through AFM measurements it is also shown that the reduced recombination events (followed by the increase in Rrec) is also a result of increased grain size between the three HTLs, thus reduction in the grain boundaries area. These charge accumulation properties of the three HTLs have resulted in an increase to the power conversion efficiency between the PEDOT:PSS (8.44%), Cu:NiOx (11.45%) and CuO (15.3%)-based devices.