Microscopic Mechanism of the Helix-to-Layer Transformation in Elemental Group VI Solids
Dan Liu, Xianqing Lin, David Tomanek

TL;DR
This study uncovers the atomic-scale mechanism behind the transformation of bulk selenium and tellurium into novel 2D layers, revealing low-energy pathways and stable allotropes through ab initio calculations.
Contribution
It introduces a detailed multi-step reaction pathway involving dislocation motion for the helix-to-layer transformation in Group VI solids, identifying new stable 2D allotropes.
Findings
Stable ta- and \u03b4 -2D allotropes identified
Low activation barriers (<0.3 eV) for transformation
All 1D and 2D chalcogen structures are semiconducting
Abstract
We study the conversion of bulk Se and Te, consisting of intertwined a helices, to structurally very dissimilar, atomically thin two-dimensional (2D) layers of these elements. Our ab initio calculations reveal that previously unknown and unusually stable \delta - and \eta-2D allotropes may form in an intriguing multi-step process that involves a concerted motion of many atoms at dislocation defects. We identify such a complex reaction path involving zipper-like motion of such dislocations that initiate structural changes. With low activation barriers <0.3 eV along the optimum path, the conversion process may occur at moderate temperatures. We find all one-dimensional (1D) and 2D chalcogen structures to be semiconducting.
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