High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions

TL;DR

This paper investigates in-plane heterojunction tunnel FETs based on monolayer transition metal dichalcogenides, demonstrating their potential for ultra-low power applications with exceptional sub-threshold swings and high Ion/Ioff ratios.

Contribution

It provides a detailed simulation-based analysis of specific heterojunction TFETs, identifying optimal configurations and performance limits for ultra-low power electronics.

Findings

Sub-threshold swing below 5mV/decade achieved

Ion/Ioff ratio exceeds 10^8 at 0.3V supply

Device performance highly tunable via design parameters

Abstract

In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian. We start by comparing several heterojunctions before focusing on the most promising ones, i.e WTe2-MoS2 and MoTe2-MoS2. The scalability of those devices as a function of channel length is studied, and the influence of backgate voltages on device performance is analysed. Our results indicate that, by fine-tuning the design parameters, those devices can yield extremely low sub-threshold swings (below 5mV/decade) and Ion/Ioff ratios higher than 1e8 at a supply voltage of 0.3V, making them ideal for ultra-low power consumption.