Design of nano-scale high static performance phase-change on-off silicon photonic switch
Nadir Ali, Rajesh Kumar

TL;DR
This paper presents a nanoscale silicon-based optical switch utilizing phase-change material Ge2Sb2Te5, achieving high extinction ratio and low insertion loss through precise dimensional design for static performance enhancement.
Contribution
The study introduces a novel high static performance optical switch design with optimized active volume and a new figure-of-merit for non-volatile switches.
Findings
Achieves 43 dB extinction ratio with 2.76 dB insertion loss at 1550 nm.
Maintains over 30 dB extinction ratio across 1500-1600 nm wavelength span.
Proposes a figure-of-merit considering static performance parameters.
Abstract
We report design of a high static performance on-off optical switch using nanoscale phase change material Ge2Sb2Te5 embedded into silicon-on-insulator waveguide. This active material can be switched between amorphous and crystalline states using electrical/optical pulses. The fundamental mode propagating through Silicon waveguide drastically alters its properties due to high index change at Si-Ge2Sb2Te5 interfaces and absorption in Ge2Sb2Te5. The optical switch made of Silicon waveguide with Ge2Sb2Te5 of volume 400 nm x 180 nm x 450 nm (length x height x width) embedded in to it, provides high extinction ratio of 43 dB with low insertion loss of 2.76 dB in ON state at communication wavelength of 1550 nm. There is trade-off between insertion loss and extinction ratio. For 10 dB extinction ratio, The insertion loss can be as low as 1.2 dB and corresponding active volume is also pretty low…
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