Electric Field Driven Memristive Behavior at the Schottky Interface of Nb doped SrTiO3

TL;DR

This paper demonstrates memristive behavior at the Schottky interface of Nb-doped SrTiO3, showing potential for neuromorphic computing due to its analog conductivity modulation, power efficiency, and endurance.

Contribution

It introduces Schottky contacts on Nb-doped SrTiO3 as memristive elements and proposes a charge trapping model to explain their switching behavior.

Findings

Electric field modulates conductivity in an analog manner.

Devices exhibit promising power consumption and endurance.

Resistance states emulate brain's forgetting process.

Abstract

Computing inspired by the human brain requires a massive parallel architecture of low-power consuming elements of which the internal state can be changed. SrTiO3 is a complex oxide that offers rich electronic properties; here Schottky contacts on Nb-doped SrTiO3 are demonstrated as memristive elements for neuromorphic computing. The electric field at the Schottky interface alters the conductivity of these devices in an analog fashion, which is important for mimicking synaptic plasticity. Promising power consumption and endurance characteristics are observed. The resistance states are shown to emulate the forgetting process of the brain. A charge trapping model is proposed to explain the switching behavior.