A High-Order Compensated Op-amp-less Bandgap Reference with 39 ppm/ {\deg}C over -260~125 {\deg}C Temperature Range and -50 dB PSRR

TL;DR

This paper introduces a high-order compensated, op-amp-less bandgap reference circuit with exceptional temperature stability and power supply rejection ratio, suitable for extreme temperature environments.

Contribution

It proposes a novel TC compensation technique using transistor current gain characteristics and demonstrates its effectiveness with Si BJTs and SiGe HBTs.

Findings

Achieves 23 ppm/°C TC over 0-70°C

Achieves 39 ppm/°C TC over -260°C to 125°C

Attains -50 dB PSRR at 1 MHz

Abstract

This brief presents a technique for compensating the temperature coefficient (TC) of a bandgap reference (BGR) using temperature characteristics of transistor's current gain \b{eta}. As a comparison, three BGR circuits built with Si BJTs and SiGe HBTs are implemented to demonstrate the proposed TC curvature compensation technique. Measured average TC of the HBT proposed BGR is 23ppm/ {\deg}C and 39 ppm/ {\deg}C over the commercial (0~70 {\deg}C) and space (-260~125 {\deg}C) temperature ranges, respectively. With the proposed PSRR improvement technique, the BGR reaches PSRR of -50dB at 1MHz, and -38dB at 1GHz, respectively.