Strain Engineering of Antimonene by a First-principles Study: Mechanical and Electronic Properties
Devesh R. Kripalani, Andrey A. Kistanov, Yongqing Cai, Ming Xue, Kun, Zhou

TL;DR
This study uses first-principles calculations to explore how strain affects the mechanical and electronic properties of monolayer antimonene, revealing strain-induced band gap transitions and enhanced transport potential.
Contribution
It provides new insights into strain-dependent electronic transitions and mechanical robustness of beta-antimonene, a promising 2D material.
Findings
Young's modulus ~25% higher than bulk antimony
Strain induces an indirect-direct band gap transition at 4% in armchair direction
Work function varies from 4.59 eV to 5.07 eV under strain
Abstract
In this work, we investigate the mechanical and electronic properties of monolayer antimonene in its most stable beta-phase using first-principles calculations. The upper region of its valence band is found to solely consist of lone pair p-orbital states, which are by nature more delocalized than the d-orbital states in transition metal dichalcogenides, implying superior transport performance of antimonene. The Young's and shear moduli of beta-antimonene are observed to be ~25% higher than those of bulk antimony, while the hexagonal lattice constant of the monolayer reduces significantly (~5%) from that in bulk, indicative of strong inter-layer coupling. The ideal tensile test of beta-antimonene under applied uniaxial strain highlights ideal strengths of 6 GPa and 8 GPa, corresponding to critical strains of 15% and 17% in the zigzag and armchair directions, respectively. During the…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
