High Field Magneto-Conductivity Analysis of Bi2Se3 Single Crystal

TL;DR

This study investigates the high-field magneto-conductivity of Bi2Se3 single crystals, revealing the coexistence of surface state weak anti-localization and bulk weak localization, with temperature-dependent phase coherence length analysis.

Contribution

It applies the HLN model to analyze high-field magneto-conductivity in Bi2Se3, extracting key parameters and elucidating surface and bulk conduction mechanisms.

Findings

Pre-factor close to -1.0 indicating WAL and WL contributions.

Phase coherence length decreases from 11.125 nm to 5.576 nm with increasing temperature.

Temperature-dependent magneto-conductivity behavior characterized by HLN model.

Abstract

We report the high field (up to 14Tesla) magneto-conductivity analysis of Bi2Se3 topological insulator grown via the self flux method. The detailed experimental investigations including crystal growth as well as the electrical, thermal and spectroscopic characterizations of the resultant Bi2Se3 single crystal are already reported by some of us. The current letter deals with high field magneto-conductivity analysis in terms of Hikami Larkin Nagaoka (HLN) model, which revealed that the electronic conduction is dominated by both surface states driven weak anti localization (WAL), as well the bulk WL (weak localization) states. Further, by applying the HLN equation we have extracted the fitting parameters i.e., phase coherence length and the pre-factor. The HLN equation exhibited values of [pre factor close to -1.0, indicating both WAL and WL contributions. On the other hand, the extracted phase coherence length is seen to decrease from 11.125 nm to 5.576 nm as the temperature is increased from 5K to 200K respectively. Summarily, the short letter discusses primarily the temperature dependent magneto-conductivity analysis of pristine Bi2Se3 single crystal by the HLN model.