Spatially Resolved Dark Count Rate of SiPMs

TL;DR

This paper introduces a novel spatially resolved method to analyze and attribute the dark count rate in SiPMs to crystal defects, revealing hotspots and their temperature-dependent mechanisms, aiming to reduce DCR for broader applications.

Contribution

A new technique using hot carrier luminescence to spatially map and analyze the origins of dark count hotspots in SiPMs, linking them to crystal defects and temperature effects.

Findings

Up to 56% of DCR is caused by less than 5% of micro-cells.

Hotspots are linked to Shockley-Read-Hall-Generation mechanisms.

Temperature dependence helps identify defect-related DCR contributions.

Abstract

The Silicon Photomultiplier (SiPM) is a promising photo-detector for a variety of applications. However, the high dark count rate (DCR) of the SiPM is still a contemporary problem. Decreasing the DCR would significantly broaden the range of possible applications. In this work we present a novel method for the spatially resolved characterization of crystal defects in SiPMs. The contribution of crystal defects to the DCR is evaluated by exploiting the effect of "hot carrier luminescence" (HCL), which is light that is emitted during the Geiger mode operation of avalanche photodiodes (SiPM micro-cells). Spatially confined regions with an enhanced light emission intensity (hotspots) are identified within the active areas of SiPM micro-cells. By correlating the detected light intensity and the DCR, a significant contribution of up to 56 % of the DCR can be attributed to less than 5 % of the micro-cells. The analysis of the temperature dependence of the emitted light identifies the Shockley-Read-Hall-Generation to be the dominant mechanism responsible for the occurrence of hotspots. The motivation of this work is to generate a deeper understanding of the origin of hotspots in order to suppress their contribution to the DCR of SiPMs.