Study of Silicon Photomultiplier Performance in External Electric Fields
X.L. Sun, T. Tolba, G.F. Cao, P. Lv, L.J. Wen, A. Odian, F. Vachon, A., Alamre, J.B. Albert, G. Anton, I.J. Arnquist, I. Badhrees, P.S. Barbeau, D., Beck, V. Belov, T. Bhatta, F. Bourque, J. P. Brodsky, E. Brown, T. Brunner,, A. Burenkov, L. Cao, W.R. Cen, C. Chambers
TL;DR
This study evaluates the stability and durability of silicon photomultiplier sensors under high external electric fields and low temperatures, demonstrating their robustness and consistent performance without damage.
Contribution
It provides the first detailed assessment of SiPM performance in electric fields up to 30 kV/cm at cryogenic temperatures, confirming their stability and safety for such conditions.
Findings
Stable gain and photon detection efficiency under electric fields
No physical damage observed after exposure
Consistent performance within measurement uncertainties
Abstract
We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No observable physical damage to the bulk or surface of the devices was caused by the exposure.
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