Three-dimensional quantum Hall effect and metal-insulator transition in ZrTe5
Fangdong Tang, Yafei Ren, Peipei Wang, Ruidan Zhong, J. Schneeloch,, Shengyuan A. Yang, Kun Yang, Patrick A. Lee, Genda Gu, Zhenhua Qiao, Liyuan, Zhang

TL;DR
This paper reports the first experimental observation of the three-dimensional quantum Hall effect in bulk ZrTe5, revealing a new quantum state driven by dimensionality, interaction, and symmetry breaking, and demonstrating a metal-insulator transition under magnetic field.
Contribution
It provides the first experimental evidence of 3D quantum Hall effect in a bulk material, expanding the understanding of topological phases beyond two dimensions.
Findings
Observation of dissipationless longitudinal resistivity in 3D ZrTe5
Detection of a Hall resistivity plateau consistent with 3D QHE
Identification of a magnetic field-driven metal-insulator transition
Abstract
Symmetry, dimensionality, and interaction are crucial ingredients for phase transitions and quantum states of matter. As a prominent example, the integer quantum Hall effect (QHE) represents a topological phase generally regarded as characteristic for two-dimensional (2D) electronic systems, and its many aspects can be understood without invoking electron-electron interaction. The intriguing possibility of generalizing QHE to three-dimensional (3D) systems was proposed decades ago, yet it remains elusive experimentally. Here, we report clear experimental evidence for the 3D QHE observed in bulk ZrTe5 crystals. Owing to the extremely high sample quality, the extreme quantum limit with only the lowest Landau level occupied can be achieved by an applied magnetic field as low as 1.5 T. Remarkably, in this regime, we observe a dissipationless longitudinal resistivity rho_xx=0 accompanied…
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