High-dimensional dynamics in a single-transistor oscillator containing Feynman-Sierpinski resonators: effect of fractal depth and irregularity
Ludovico Minati, Mattia Frasca, Gianluca Giustolisi, Pawel Oswiecimka,, Stanislaw Drozdz, Leonardo Ricci

TL;DR
This paper demonstrates that fractal resonators in a single-transistor oscillator can induce high-dimensional chaotic dynamics, with irregularities and component non-idealities influencing the complexity and practical realization.
Contribution
It introduces the use of fractal resonators in simple oscillators to generate high-dimensional chaos and explores the effects of fractal depth and irregularities on dynamics.
Findings
Increasing fractal depth raises the chaos dimension.
Irregular fractal resonators produce richer dynamics.
Component non-idealities limit high-dimensional chaos.
Abstract
Fractal structures pervade nature and are receiving increasing engineering attention towards the realization of broadband resonators and antennas. We show that fractal resonators can support the emergence of high-dimensional chaotic dynamics even in the context of an elementary, single-transistor oscillator circuit. Sierpi\'nski gaskets of variable depth are constructed using discrete capacitors and inductors, whose values are scaled according to a simple sequence. It is found that in regular fractals of this kind each iteration effectively adds a conjugate pole/zero pair, yielding gradually more complex and broader frequency responses, which can also be implemented as much smaller Foster equivalent networks. The resonators are instanced in the circuit as one-port devices, replacing the inductors found in the initial version of the oscillator. By means of a highly simplified numerical…
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