Defects-driven magnetism in bulk $\alpha$-Li$ _{3}$N
Saima Kanwal, Gul Rahman

TL;DR
This study uses ab-initio calculations to explore how various defects and doping in bulk α-Li3N induce magnetism, revealing defect stability, electronic structure changes, and magnetic coupling behaviors.
Contribution
It provides new insights into defect-induced and dopant-induced magnetism in α-Li3N, highlighting the stability and electronic effects of Li and N vacancies and C doping.
Findings
Li vacancies induce magnetism with 1 μB magnetic moment.
Li-II vacancies are more thermodynamically stable than Li-I vacancies.
C doping can induce half-metallic magnetism and metallicity.
Abstract
\textit{Ab-initio} calculations based on density functional theory with local spin density approximation are used to study defects-driven magnetism in bulk -LiN. Our calculations show that bulk LiN is a non-magnetic semiconductor. Two types of Li vacancies (Li-I and Li-II) are considered, and Li-vacancies (either Li-I or Li-II type) can induce magnetism in LiN with a total magnetic moment of 1.0 which arises mainly due to partially occupied N--orbitals around the Li vacancies. The defect formation energies dictate that Li-II vacancy, which is in the LiN plane, is thermodynamically more stable as compared with Li-I vacancy. The electronic structures of Li-vacancies show half-metallic behavior. On the other hand N-vacancy does not induce magnetism and has a larger formation energy than Li-vacancies. N vacancy derived bands at the Fermi…
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