Demonstration of long-term thermally stable Silicon-Organic Hybrid Modulators at 85 {\deg}C
Clemens Kieninger, Yasar Kutuvantavida, Hiroki Miura, Juned N. Kemal,, Heiner Zwickel, Feng Qiu, Matthias Lauermann, Wolfgang Freude, Sebastian, Randel, Shiyoshi Yokoyama, and Christian Koos

TL;DR
This paper demonstrates silicon-organic hybrid modulators that maintain stable electro-optic performance at 85°C over long periods, meeting industry standards and enabling reliable high-speed optical communication.
Contribution
First demonstration of thermally stable silicon-organic hybrid modulators with high-temperature endurance according to industry standards.
Findings
Electro-optic activity stabilizes after initial decay at 85°C.
Less than 15% increase in π-voltage after 300h burn-in and 2400h storage.
High-quality 40 Gbit/s OOK signals achieved post-storage.
Abstract
We report on the first demonstration of long-term thermally stable silicon-organic hybrid (SOH) modulators in accordance with Telcordia standards of high-temperature storage. The devices rely on an organic electro-optic sidechain polymer with a high glass transition temperature of 172 {\deg}C. In our high-temperature storage experiments at 85 {\deg}C, we find that the electro-optic activity converges to a constant long-term stable level after an initial decay. If we consider a burn-in time of 300 h, the {\pi}-voltage of the modulators increases on average by less than 15 % if we store the devices for additional 2400 h. The performance of the devices is demonstrated by generating high-quality 40 Gbit/s OOK signals both after the burn-in period and after extended high-temperature storage.
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