Bi monocrystal formation on InAs(111)A and B substrates

TL;DR

This study investigates the epitaxial growth and electronic structure of bismuth films on different InAs(111) surface terminations, revealing face-dependent growth modes and electronic properties through advanced spectroscopy and calculations.

Contribution

It provides a detailed comparison of Bi film growth on InAs(111)A and B surfaces, highlighting the epitaxial growth on A face and island formation on B face, along with electronic structure insights.

Findings

Bi grows epitaxially on InAs(111)A face.

Bi forms islands on InAs(111)B face.

Electronic structure of Bi on A face matches bulk Bi at ~10 BL.

Abstract

The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi growth on the A face (In-terminated InAs) is epitaxial, contrary to that on the B face (As- terminated InAs) that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a $\approx 10$~BL deposit on the A face is identical to that of bulk Bi, while more than $\approx 30$ BL are needed for the B face. Both bulk and surface states are well accounted for by fully relativistic ab initio spin-resolved photoemission calculations.