Nanoscale compositional evolution in complex oxide based resistive memories

TL;DR

This study investigates the nanoscale compositional and structural changes in amorphous chromium-doped strontium titanate resistive memory devices during switching, revealing how redox processes influence their resistive states.

Contribution

It provides detailed micro/nano-structural analysis of resistive switching in amorphous complex oxides, highlighting the role of compositional changes and redox processes.

Findings

Structural changes correlate with resistive states

Redox processes influence switching behavior

Insights into compositional evolution during operation

Abstract

Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional oxides is required to tune the resistive switching characteristics for enhanced memory performance. Herein, we present the micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching. Oxygen deficient amorphous chromium doped strontium titanate (Cr:$a$-SrTiO$_{3-x}$) based resistance change memories are fabricated in a Ti/Cr:$a$-SrTiO$_{3-x}$ heterostructure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states shows that the micro/nano-structural changes in amorphous complex oxide and associated redox processes define the resistive switching behavior. These experimental results provide insights and supporting material for Ref. [1].