A 28/37/39GHz Multiband Linear Doherty Power Amplifier in Silicon for 5G Applications
Song Hu, Fei Wang, and Hua Wang

TL;DR
This paper introduces a multiband mm-wave linear Doherty power amplifier in silicon for 5G, featuring a novel transformer-based combiner and a co-design method that enhances bandwidth and efficiency without extra hardware.
Contribution
It presents the first multiband mm-wave linear Doherty PA in silicon, with a new transformer-based combiner and a driver-PA co-design approach for improved performance.
Findings
Achieves 52% -3dB bandwidth and 40% -1dB saturated power bandwidth.
Delivers +17 dBm saturated output power at 28/37/39 GHz.
Demonstrates multi-Gb/s data rates with high efficiency and linearity.
Abstract
This paper presents the first multiband mm-wave linear Doherty PA in silicon for broadband 5G applications. We introduce a new transformer-based on-chip Doherty power combiner, which can reduce the impedance transformation ratio in power back-off (PBO) and thus improve the bandwidth and power-combining efficiency. We also devise a "driver-PA co-design" method, which creates power-dependent uneven feeding in the Doherty PA and enhances the Doherty operation without any hardware overhead or bandwidth compromise. For the proof of concept, we implement a 28/37/39-GHz PA fully integrated in a standard 130-nm SiGe BiCMOS process, which occupies 1.8mm2. The PA achieves a 52% -3-dB small-signal S21 bandwidth and a 40% -1-dB large-signal saturated output power (Psat) bandwidth. At 28/37/39GHz, the PA achieves +16.8/+17.1/+17-dBm Psat, +15.2/+15.5/+15.4-dBm P1dB, and superior 1.72/1.92/1.62 times…
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Taxonomy
TopicsAdvanced Power Amplifier Design · Radio Frequency Integrated Circuit Design · Microwave Engineering and Waveguides
